hmic? silicon pin diode switches rev. v10 ma4swx10 series 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? broad bandwidth ? specified from 50 mhz to 20 ghz ? usable from 50 mhz to 26.5 ghz ? lower insertion loss / higher isolation ? fully monolithic, glass encapsulated chip ? up to +33 dbm cw power handling @ +25c ? rohs* compliant description the ma4sw110 (spst), ma4sw210 (spdt) and ma4sw310 (sp3t) are series - shunt, broadband, pin diode switches made with macoms hmic tm (heterolithic microwave integrated circuit) process. this process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. by also incorporating small spacing between circuit elements, the result is an hmic chip with low insertion loss and high isolation at frequencies up to 26.5 ghz. they are designed for use as moderate power, high performance switches and provide superior performance when compared to similar designs that use discrete components. the top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. the gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy. ordering information part number package ma4sw110 gel pack ma4sw210 gel pack ma4sw310 gel pack *restrictions on hazardous substances, european union directive 2011/65/eu. ma4sw110 (spst) functional diagrams ma4sw210 (spdt) ma4sw310 (sp3t) j 1 j 2 j 2 j 3 j 1 j 2 j 4 j 1 j 3
hmic? silicon pin diode switches rev. v10 ma4swx10 series 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 electrical specifications: t a = 25c, 20 ma parameter test conditions units min. typ. max. insertion loss 6 ghz 13 ghz 20 ghz db 0.4 0.5 0.7 0.7 0.9 1.2 isolation 6 ghz 13 ghz 20 ghz db 46 39 34 55 47 42 input return loss 6 ghz 13 ghz 20 ghz db 22 15 14 31 33 27 switching speed 1 ns 50 voltage rating 2 v 50 signal compression 500 mw, 1 ghz db 0.2 1. typical switching speed is measured from (10% to 90% and 90% to 10% of detected rf voltage), driven by ttl compatible drivers . i n the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) the switching speed is m eas ured using an rc network using the following values: r = 50 - 200 , c = 390 - 1000 pf. driver spike current, i c = c dv/dt, ratio of spike current to steady state current, is typically 10:1. 2. maximum reverse leakage current in either the shunt or series pin diodes shall be 10 a maximum at - 50 volts. ma4sw110 (spst) ma4sw210 (spdt) ma4sw310 (sp3t) parameter test conditions units min. typ. max. insertion loss 6 ghz 13 ghz 20 ghz db 0.4 0.5 0.7 0.7 1.0 1.2 isolation 6 ghz 13 ghz 20 ghz db 48 40 34 63 50 42 input return loss 6 ghz 13 ghz 20 ghz db 20 18 15 27 25 25 switching speed 1 ns 50 voltage rating 2 v 50 signal compression 500 mw, 1 ghz db 0.2 parameter test conditions units min. typ. max. insertion loss 6 ghz 13 ghz 20 ghz db 0.5 0.7 0.9 0.8 1.1 1.5 isolation 6 ghz 13 ghz 20 ghz db 49 42 33 57 48 42 input return loss 6 ghz 13 ghz 20 ghz db 20 14 11 24 22 21 switching speed 1 ns 50 voltage rating 2 v 50 signal compression 500 mw, 1 ghz db 0.2
hmic? silicon pin diode switches rev. v10 ma4swx10 series 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 insertion loss vs. bias current absolute maximum ratings 3,4,5 parameter absolute maximum rf cw incident power +33 dbm reverse voltage - 50 v bias current per port 50 ma @ +25c operating temperature - 65c to +125c storage temperature - 65c to +150c junction temperature +175c 3. exceeding any one or combination of these limits may cause permanent damage to this device. 4. macom does not recommend sustained operation near these survivability limits. 5. maximum operating conditions for a combination of rf power, dc bias and temperature: +33 dbm cw @ 15 ma (per diode) +85c. handling procedures please observe the following precautions to avoid damage: static sensitivity these electronic devices are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 0 (hbm) and class c1 (cdm).devices. typical performance curves @ 10 ghz: input return loss vs. bias current isolation vs. bias current output return loss vs. bias current -0.7 -0.6 -0.5 -0.4 -0.3 0 10 20 30 40 50 ma4sw110 ma4sw210 ma4sw310 (db) current (ma) -54 -52 -50 -48 -46 0 10 20 30 40 50 ma4sw110 ma4sw210 ma4sw310 (db) current (ma) -35 -30 -25 -20 -15 0 10 20 30 40 50 ma4sw110 ma4sw210 ma4sw310 (db) current (ma) -35 -30 -25 -20 -15 0 10 20 30 40 50 ma4sw110 ma4sw210 ma4sw310 (db) current (ma)
hmic? silicon pin diode switches rev. v10 ma4swx10 series 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 typical performance curves @ t a = +25c, 20 ma bias current return loss vs. frequency return loss vs. frequency return loss vs. frequency insertion loss vs. frequency insertion loss vs. frequency insertion loss vs. frequency ma4sw110 ma4sw210 ma4sw310 -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 input return loss output return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 input return loss output return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 input return loss output return loss (db) frequency (ghz) -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 5 10 15 20 25 30 (db) frequency (ghz) -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 5 10 15 20 25 30 (db) frequency (ghz) -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 5 10 15 20 25 30 (db) frequency (ghz)
hmic? silicon pin diode switches rev. v10 ma4swx10 series 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 typical performance curves @ t a = +25c, 20 ma bias current isolation vs. frequency isolation vs. frequency isolation vs. frequency ma4sw110 ma4sw210 ma4sw310 -80 -70 -60 -50 -40 -30 0 5 10 15 20 25 30 (db) frequency (ghz) -80 -70 -60 -50 -40 -30 0 5 10 15 20 25 30 (db) frequency (ghz) -80 -70 -60 -50 -40 -30 0 5 10 15 20 25 30 (db) frequency (ghz)
hmic? silicon pin diode switches rev. v10 ma4swx10 series 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 dc control current (ma) rf output state j2 j1 - j2 - 20 low loss +20 isolation compatible macom driver madr - 007097 - 000100 driver connections and drivers 6. rlc values are for an operation frequency of 2 - 18 ghz and bias current of 20 ma per port.. ma4sw110 (spst) ma4sw210 (spdt) ma4sw310 (sp3t) dc control current (ma) rf output states j2 j3 j1 - j2 j1 - j3 - 20 +20 low loss isolation +20 - 20 isolation low loss compatible macom driver madr - 007097 - 000100 dc control current (ma) rf output states j2 j3 j4 j1 - j2 j1 - j3 j1 - j4 - 20 +20 +20 low loss isolation isolation +20 - 20 +20 isolation low loss isolation +20 +20 - 20 isolation isolation low loss compatible macom driver madr - 009190 - 000100 operation of ma4sw series switches the simultaneous application of a negative dc current to the low loss port and positive dc current to the isolated port is required for proper operation of the ma4sw series of pin switches. the backside area of the die is the rf and dc ground return and the dc return is through the common port j1. a constant current source should be used to supply the dc control currents. the control voltages at these points will not exceed 1.5 volts for supply currents up to + 50ma. in the low loss state, the se- ries diode must be forward biased and the shunt diode reverse biased. on all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. bias connections 6 ma4sw110 (spst) ma4sw210 (spdt) ma4sw310 (sp3t) j 1 r f i n 2 0 p f 2 0 p f 2 0 n h 1 0 0 2 0 n h 2 0 p f 2 0 p f r f o u t j 2 s w i t c h c h i p j 2 b i a s j 1 r f i n 2 0 p f 2 0 p f 2 0 n h 1 0 0 2 0 n h 2 0 p f 2 0 p f r f o u t j 2 s w i t c h c h i p 2 0 n h 2 0 p f 2 0 p f r f o u t j 3 j 3 b i a s j 2 b i a s j 1 r f i n 2 0 p f 2 0 p f 2 0 n h 1 0 0 2 0 n h 2 0 p f 2 0 p f r f o u t j 2 s w i t c h c h i p 2 0 n h 2 0 p f 2 0 p f r f o u t j 4 j 4 b i a s j 2 b i a s j 3 r f o u t 2 0 p f 2 0 p f j 3 2 0 n h b i a s
hmic? silicon pin diode switches rev. v10 ma4swx10 series 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 7 ma4sw110 inches mm dim min. max. min. max. a 0.014 0.018 0.35 0.45 b 0.025 0.029 0.64 0.74 c 0.008 ref. 0.20 ref. d 0.004 0.006 0.10 0.15 e 0.004 ref. 0.10 ref. f 0.003 ref. 0.08 ref. g 0.003 ref. 0.08 ref. h 0.020 ref. 0.52 ref. 7. topside and backside metallization is gold, 2.5 m thick typical. 8. yellow areas indicate ribbon/wire bonding pads chip outline drawings 7,8 dim inches mm min. max. min. max. a 0.029 0.033 0.73 0.83 b 0.004 0.006 0.10 0.15 c 0.004 ref. 0.10 ref. d 0.005 ref. 0.13 ref. e 0.009 ref. 0.23 ref. f 0.023 ref. 0.58 ref. g 0.007 ref. 0.17 ref. h 0.004 ref. 0.10 ref. dim inches mm min. max. min. max. a 0.046 0.050 1.16 1.26 b 0.036 0.040 0.92 1.02 c 0.019 ref. 0.48 ref. d 0.014 ref. 0.36 ref. e 0.004 ref. 0.10 ref. f 0.005 ref. 0.13 ref. g 0.004 0.10 0.006 0.15 h 0.005 ref. 0.12 ref. j 0.004 ref. 0.10 ref. ma4sw210 ma4sw310
hmic? silicon pin diode switches rev. v10 ma4swx10 series 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 8 cleanliness the chips should be handled in a clean environment free of dust and organic contamination. wire / ribbon bonding thermo compression wedge bonding using 0.003 x 0.00025 ribbon or 0.001 diameter gold wire is recommended. a work stage temperature of 150c - 200c, tool tip temperature of 120c - 150 and a downward force of 18 to 22 grams should be used. if ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. excessive power or force will fracture the silicon beneath the bond pad causing it to lift. rf bond wires and ribbons should be kept as short as possible for optimum rf performance. chip mounting hmic switches have ti - pt - au backside metallization and can be mounted using a gold - tin eutectic solder or conductive epoxy. mounting surface must be free of contamination and flat. eutectic die attachment 80/20, gold - tin, solder is recommended. a re - flow oven or hot gas die bonder with a temperature setting of 290c is normally used to melt the solder. the chip should not be exposed to temperatures greater than 320c for more than 20 seconds. typically no more than three seconds at peak temperature is required for attachment. rohs compliant solders may also be used but solders rich in tin should be avoided as they will scavenge the backside gold and/or cause gold embrittlement. epoxy die attachment a minimum amount of epoxy, 1 - 2 mils thick, should be used to attach chip. a thin epoxy fillet should be visible around the outer perimeter of the chip after placement. epoxy cure time is typically 1 hour at 150c.
hmic? silicon pin diode switches rev. v10 ma4swx10 series 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 9 m/a - com technology solutions inc. all rights reserved. information in this document is provided in connection with m/a - com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom's terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissions in these materials. macom may make changes to specifications and product descriptions at any time, without notice. macom makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" without warranty of any kind, either express or implied, relating to sale and/or use of macom products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifesaving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale.
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